Carrier-Transport Study of Gallium Arsenide Hillock Defects.

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ID: 88304
2019
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Ranked #2 of 26 articles by views in Microscopy and microanalysis : the official journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada

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Abstract
Single-crystalline gallium arsenide (GaAs) grown by various techniques can exhibit hillock defects on the surface when sub-optimal growth conditions are employed. The defects act as nonradiative recombination centers and limit solar cell performance. In this paper, we applied near-field transport imaging to study hillock defects in a GaAs thin film. On the same defects, we also performed near-field cathodoluminescence, standard cathodoluminescence, electron-backscattered diffraction, transmission electron microscopy, and energy-dispersive X-ray spectrometry. We found that the luminescence intensity around the hillock area is two orders of magnitude lower than on the area without hillock defects in the millimeter region, and the excess carrier diffusion length is degraded by at least a factor of five with significant local variation. The optical and transport properties are affected over a significantly larger region than the observed topography and crystallographic and chemical compositions associated with the defect.
Reference Key
xiao2019carriertransportmicroscopy Use this key to autocite in the manuscript while using SciMatic Manuscript Manager or Thesis Manager
Authors Xiao, Chuanxiao;Jiang, Chun-Sheng;Liu, Jun;Norman, Andrew;Moseley, John;Schulte, Kevin;Ptak, Aaron J;Gorman, Brian;Al-Jassim, Mowafak;Haegel, Nancy M;Moutinho, Helio;
Journal Microscopy and microanalysis : the official journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada
Year 2019
DOI
10.1017/S1431927619014909
URL
Keywords
solar cell carrier transport defect gallium arsenide near field

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