Nanoscale electrical analyses of axial-junction GaAsP nanowires for solar cell applications.

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ID: 88294
2020
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Abstract
Axial p-n and p-i-n junctions in GaAsP nanowires are demonstrated and analyzed using electron beam induced current microscopy. Organized self-catalyzed nanowire arrays are grown by molecular beam epitaxy on nanopatterned Si substrates. The nanowires are doped using Be and Si impurities to obtain p- and n-type conductivity, respectively. A method to determine the doping type by analyzing the induced current in the vicinity of a Schottky contact is proposed. It is demonstrated that for the applied growth conditions using Ga as a catalyst, Si doping induces an n-type conductivity contrary to the GaAs self-catalyzed nanowire case, where Si was reported to yield a p-type doping. Active axial nanowire p-n junctions having a homogeneous composition along the axis are synthesized and the carrier concentration and minority carrier diffusion lengths are measured. To the best of our knowledge, this is the first report of axial p-n junctions in self-catalyzed GaAsP nanowires.
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saket2020nanoscalenanotechnology Use this key to autocite in the manuscript while using SciMatic Manuscript Manager or Thesis Manager
Authors Saket, Omar;Himwas, Chalermchai;Piazza, Valerio;Bayle, Fabien;Cattoni, Andrea;Oehler, Fabrice;Patriarche, Gilles;Travers, Laurent;Collin, Stephane;Julien, François H;Harmand, Jean-Christophe;Tchernycheva, Maria;
Journal Nanotechnology
Year 2020
DOI
10.1088/1361-6528/ab62c9
URL
Keywords
nanowire solar cell bottom reflectivity conversion efficiency

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