Atomic Layer Deposition of an Effective Interface Layer of TiN for Efficient and Hysteresis-Free Mesoscopic Perovskite Solar Cells.

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ID: 87669
2020
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Abstract
Perovskite solar cells (PSCs) have experienced an outstanding advance in power conversion efficiency (PCE) by employing new electron transporting layers (ETLs), interfaces engineering, optimizing perovskite morphology and improving charge collection efficiency. In this work, we study the role of a new ultrathin interface layer of titanium nitride (TiN) conformally deposited on mesoporous TiO2 (mp-TiO2) scaffold using atomic layer deposition (ALD) method. Our characterization results revealed that the presence of TiN at the ETL/perovskite interface improves the charge collection as well as reduces the interface recombination. We find that the morphology (grain size) and optical properties of the perovskite film deposited on optimized mp-TiO2/TiN ETL are improved drastically leading to devices with a maximum PCE of 19.38% and a high open-circuit voltage (Voc) of 1.148 V with negligible hysteresis and improved environmental (~40% RH) and thermal (80oC) stability.
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chavan2020atomicacs Use this key to autocite in the manuscript while using SciMatic Manuscript Manager or Thesis Manager
Authors Chavan, Rohit D;Tavakoli, Mohammad Mahdi;Prochowicz, Daniel;Yadav, Pankaj;Lote, Shivani S;Bhoite, Sangram P;Nimbalkar, Ajaysing;Hong, Chang Kook;
Journal ACS applied materials & interfaces
Year 2020
DOI
10.1021/acsami.9b18082
URL
Keywords
benzo[1,2-b:4,5-c′]dithiophene-4,8-dione donor polymers nonfullerene solar cells thieno[3,4-b]thiophene

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