Simulation analysis of rectangular dielectric-loaded traveling wave amplifiers for THz sources
Clicks: 312
ID: 86771
2007
Article Quality & Performance Metrics
Overall Quality
Improving Quality
0.0
/100
Combines engagement data with AI-assessed academic quality
Reader Engagement
Emerging Content
7.8
/100
26 views
26 readers
Trending
AI Quality Assessment
Not analyzed
Abstract
Nonlinear simulation results for a 220-GHz rectangular dielectric-loaded traveling-wave amplifier are presented. Simulations are used to check a linear theory that is developed by phenomenological introduction of an effective dielectric parameter for electron beam channel, and it is found that the rf power gains from Pierce three-wave theory and particle simulations are in reasonable agreement. It is shown that the rf power gain during initial beam-wave interaction is positive; the falling on the initial rf power profile, which has been thought to be the rf power transferred to the beam for bunching buildup (negative gain effect), is probably resulting from numerical errors. Beam-wave interaction mechanism is analyzed by examining the evolution of beam bunching centers. Influences of various parameters on amplifier performance are examined, and transverse space-charge effect is analyzed. A symmetric excitation scheme for rf couplers is proposed, and rf field jumps on the common intersection line of vacuum, dielectric, and metal wall, which were found in rf simulations, are explained theoretically.
| Reference Key |
wang2007simulationphysical
Use this key to autocite in the manuscript while using
SciMatic Manuscript Manager or Thesis Manager
|
|---|---|
| Authors | Wang, Changbiao; |
| Journal | physical review special topics accelerators and beams |
| Year | 2007 |
| DOI |
DOI not found
|
| URL | |
| Keywords |
Citations
No citations found. To add a citation, contact the admin at info@scimatic.org
Comments
No comments yet. Be the first to comment on this article.