Morphological dependent Indium incorporation in InGaN/GaN multiple quantum wells structure grown on 4° misoriented sapphire substrate

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ID: 78440
2016
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Abstract
The epitaxial layers of InGaN/GaN MQWs structure were grown on both planar and vicinal sapphire substrates by metal organic chemical vapor deposition. By comparing the epitaxial layers grown on planar substrate, the sample grown on 4° misoriented from c-plane toward < 10 1 ̄ 0 > m-plane substrate exhibited many variations both on surface morphology and optical properties according to the scanning electronic microscopy and cathodoluminescence (CL) spectroscopy results. Many huge steps were observed in the misoriented sample and a large amount of V-shape defects located around the boundary of the steps. Atoms force microscopy images show that the steps were inclined and deep grooves were formed at the boundary of the adjacent steps. Phase separation was observed in the CL spectra. CL mapping results also indicated that the deep grooves could effectively influence the localization of Indium atoms and form an In-rich region.
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jiang2016morphologicalaip Use this key to autocite in the manuscript while using SciMatic Manuscript Manager or Thesis Manager
Authors Jiang, Teng;Xu, Shengrui;Zhang, Jincheng;Li, Peixian;Huang, Jun;Ren, Zeyang;Zhu, Jiaduo;Chen, Zhibin;Zhao, Ying;Hao, Yue;
Journal aip advances
Year 2016
DOI
DOI not found
URL
http://dx.doi.org/10.1063/1.4944862
Keywords
chemistry Biology (General) Veterinary medicine Medicine Materials of engineering and construction. Mechanics of materials Engineering (General). Civil engineering (General) Biotechnology Technology physics fuel

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