Improvement of transconductance and cut-off frequency in In 0.1 Ga 0.9 N back-barrier-based double-channel Al 0.3 Ga 0.7 N / GaN high electron mobility transistor by enhancing the drain source contact length ratio
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ID: 78411
2020
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| Reference Key |
mohapatra2020improvementpramana
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|---|---|
| Authors | Mohapatra, R. |
| Journal | pramana - journal of physics |
| Year | 2020 |
| DOI |
10.1007/s12043-019-1866-4
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| URL | |
| Keywords | Keywords not found |
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