Growth Characterization of Intermetallic Compound at the Ti/Al Solid State Interface.
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2019
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Abstract
Ti-Al diffusion couples, prepared by resistance spot welding, were annealed up to 112 hours at 823, 848, and 873 K in ambient atmosphere. The interfacial microstructure was observed and analyzed using SEM and TEM. The growth characterization of intermetallic compound formed at the Ti/Al solid state interface was investigated. Only TiAl₃ phase was detected in the interfacial zone, and its growth was governed by reaction-controlled mechanism in the previous period and by diffusion-controlled mechanism in the latter period. The activation energies were 198019 and 122770 J/mol for reaction-controlled and diffusion-controlled mechanism, respectively.
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zhao2019growthmaterials
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| Authors | Zhao, Yangyang;Li, Jiuyong;Qiu, Ranfeng;Shi, Hongxin; |
| Journal | Materials (Basel, Switzerland) |
| Year | 2019 |
| DOI |
E472
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