Reducing the Short Channel Effect of Transistors and Reducing the Size of Analog Circuits
Clicks: 234
ID: 7698
2019
Article Quality & Performance Metrics
Overall Quality
Not rated
Combines reader engagement with the AI quality analysis. This
article has not been analysed, so there is no overall score —
reader engagement is measured and shown alongside.
Reader Engagement
Emerging Content
61.6
/100
234 views
172 readers
Trending
AI Quality Assessment
Not analyzed
Readership in this journal
EmergingRanked #28 of 35 articles by views in active and passive electronic components
Most read
Least read
Bar heights use a square-root scale.
Mint this article as an NFT
Not yet mintedCreate a permanent, verifiable on-chain record of this article on the Scimatic Network. The NFT is held in your Journament account, and you can withdraw it to your own wallet at any time.
5
SUSD
one-off · no wallet required
Abstract
Analog integrated circuits never follow the Moore’s Law. This is particularly right for passive component. Due to the Short Channel Effect, we have to implement longer transistor, especially for analog cell. In this paper, we propose a new topology using some advantages of the FDSOI (Fully Depleted Silicon on Insulator) technology in order to reduce the size of analog cells. First, a current mirror was chosen to illustrate and validate a new design. Measured currents, with 35nm transistor length, have validated our new cross-coupled back-gate topology. Then, a VCRO (Voltage Controlled Ring Oscillator) based on complementary inverter is also used to remove passive components reducing the size of the circuit.
| Reference Key |
zhaopeng2019reducingactive
Use this key to autocite in the manuscript while using
SciMatic Manuscript Manager or Thesis Manager
|
|---|---|
| Authors | Wei, Zhaopeng;Jacquemod, Gilles;Leduc, Yves;Foucauld, Emeric de;Prouvee, Jerome;Blampey, Benjamin;Wei, Zhaopeng;Jacquemod, Gilles;Leduc, Yves;Foucauld, Emeric de;Prouvee, Jerome;Blampey, Benjamin; |
| Journal | active and passive electronic components |
| Year | 2019 |
| DOI |
10.1155/2019/4578501
|
| URL | |
| Keywords | Keywords not found |
Citations
No citations found. To add a citation, contact the admin at info@scimatic.org
Comments
No comments yet. Be the first to comment on this article.