Direct, transfer-free growth of large-area hexagonal boron nitride films by plasma-enhanced chemical film conversion (PECFC) of printable, solution-processed ammonia borane.

Clicks: 341
ID: 768
2018
Article Quality & Performance Metrics
Overall Quality
Not rated
Combines reader engagement with the AI quality analysis. This article has not been analysed, so there is no overall score — reader engagement is measured and shown alongside.
AI Quality Assessment
Not analyzed
Readership in this journal
Steady

Ranked #86 of 899 articles by views in ACS applied materials & interfaces

Most read Least read

Bar heights use a square-root scale. Only the 120 most-read articles are drawn; the journal has 899 in total.

Mint this article as an NFT
Not yet minted

Create a permanent, verifiable on-chain record of this article on the Scimatic Network. The NFT is held in your Journament account, and you can withdraw it to your own wallet at any time.

5 SUSD one-off · no wallet required
Sign in to mint
Abstract
Synthesis of large-area hexagonal boron nitride (h-BN) films for two-dimensional (2D) electronic applications typically requires high temperatures (~1000 oC) and catalytic metal substrates which necessitate transfer. Here, analogous to plasma-enhanced chemical vapor deposition, a non-thermal plasma is employed to create energetic and chemically-reactive states such as atomic hydrogen and convert a molecular precursor film to h-BN at temperatures as low as 500 oC directly on metal-free substrates - a process we term plasma-enhanced chemical film conversion (PECFC). Films containing ammonia borane as a precursor are prepared by a variety of solution processing methods including spray deposition, spin coating, and ink-jet printing, and reacted in a cold-wall reactor with a planar dielectric barrier discharge operated at atmospheric pressure in a background of argon or mixture of argon and hydrogen. Systematic characterization of the converted h-BN films by micro Raman spectroscopy shows that the minimum temperature for nucleation on silicon-based substrates can be lowered from 800 to 500 oC by the addition of a plasma. Furthermore, the crystalline domain size, as reflected by a decrease in the full-width-half-maximum, increased by more than 3 times (>40 cm-1 to ~13 cm-1). To demonstrate the potential of the h-BN films as a gate dielectric in 2D electronic devices, molybdenum disulfide field-effect transistors were fabricated and the field effect mobility was found to be improved by up to four times over silicon dioxide. Overall, PECFC allows h-BN films to be grown at lower temperatures and with improved crystallinity than CVD, directly on substrates suitable for electronic device fabrication.
Reference Key
liu2018direct, Use this key to autocite in the manuscript while using SciMatic Manuscript Manager or Thesis Manager
Authors Liu, Tianqi;Premasiri, Kasun;Sui, Yongkun;Zhan, Xun;Mustafa, Haithem A B;Akkus, Ozan;Zorman, Christian A;Gao, Xuan P A;Sankaran, R Mohan;
Journal ACS applied materials & interfaces
Year 2018
DOI
10.1021/acsami.8b17152
URL
Keywords Keywords not found

Citations

No citations found. To add a citation, contact the admin at info@scimatic.org

Comments

No comments yet. Be the first to comment on this article.