Carrier control in 2D transition metal dichalcogenides with AlO dielectric.

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ID: 76758
2019
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Abstract
We report transport measurements of dual gated MoS and WSe devices using atomic layer deposition grown AlO as gate dielectrics. We are able to achieve current pinch-off using independent split gates and observe current steps suggesting possible carrier confinement. We also investigated the impact of gate geometry and used electrostatic potential simulations to explain the observed device physics.
Reference Key
lau2019carrierscientific Use this key to autocite in the manuscript while using SciMatic Manuscript Manager or Thesis Manager
Authors Lau, Chit Siong;Chee, Jing Yee;Thian, Dickson;Kawai, Hiroyo;Deng, Jie;Wong, Swee Liang;Ooi, Zi En;Lim, Yee-Fun;Goh, Kuan Eng Johnson;
Journal Scientific reports
Year 2019
DOI
10.1038/s41598-019-45392-9
URL
Keywords
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