Unipolar resistive switching behavior in Al2O3/HfO2 multilayer dielectric stacks: fabrication, characterization and simulation.

Clicks: 297
ID: 72092
2019
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Abstract
In this work, the impact of different HfO2/Al2O3-based multilayer dielectric stack configurations on the electrical characteristics and on the resistive switching performance of Ni/Insulator/Silicon devices has been systematically investigated. Significant differences are observed in the electrical characteristics of the fabricated bilayer, trilayer and pentalayer stacks compared to a single HfO2 layer of the same physical thickness. The resistive switching analysis has shown similar low resistance state currents and set voltages for all the dielectric stack combinations whereas currents at the high resistance state and reset voltages depend on the dielectric stack. The shift of the reset voltage to lower values for HfO2 and Al2O3/HfO2/Al2O3 cases is explained by the results from thermal simulations that reveal that these differences could be associated to the different temperature distributions at the narrowest part of the conductive filament immediately before the thermally triggered reset process occurs.
Reference Key
maestro-izquierdo2019unipolarnanotechnology Use this key to autocite in the manuscript while using SciMatic Manuscript Manager or Thesis Manager
Authors Maestro Izquierdo, Marcos;Gonzalez, Mireia B;Jimenez-Molinos, Francisco;Moreno, Enrique;Roldan, Juan B;Campabadal, Francesca;
Journal Nanotechnology
Year 2019
DOI
10.1088/1361-6528/ab5f9a
URL
Keywords
resistive switching ald al2o3 hfo2 multilayer dielectric stacks nanolaminates thermal simulations

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