Morphology Controlled Fabrication of InN Nanowires on Brass Substrates

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ID: 66599
2016
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Abstract
Growth of semiconductor nanowires on cheap metal substrates could pave the way to the large-scale manufacture of low-cost nanowire-based devices. In this work, we demonstrated that high density InN nanowires can be directly grown on brass substrates by metal-organic chemical vapor deposition. It was found that Zn from the brass substrates is the key factor in the formation of nanowires by restricting the lateral growth of InN. The nanowire morphology is highly dependent on the growth temperature. While at a lower growth temperature, the nanowires and the In droplets have large diameters. At the elevated growth temperature, the lateral sizes of the nanowires and the In droplets are much smaller. Moreover, the nanowire diameter can be controlled in situ by varying the temperature in the growth process. This method is very instructive to the diameter-controlled growth of nanowires of other materials.
Reference Key
li2016morphologynanomaterials Use this key to autocite in the manuscript while using SciMatic Manuscript Manager or Thesis Manager
Authors Li, Huijie;Zhao, Guijuan;Wang, Lianshan;Chen, Zhen;Yang, Shaoyan;
Journal Nanomaterials
Year 2016
DOI
DOI not found
URL
http://www.mdpi.com/2079-4991/6/11/195
Keywords
chemistry Medicine Materials of engineering and construction. Mechanics of materials Chemical technology Technology Science (General) Science physics crystallography

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