Study on ultra-high sensitivity piezoelectric effect of GaN micro/nano columns.

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2019
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Abstract
High-quality GaN micro/nano columns were prepared with self-organized catalytic-free method. Young's modulus of GaN nanocolumns were measured under both compressive stress and tensile stress. It was found that the Young's modulus decreases with the increasing of nanocolumn diameter due to the increase of face defect density. Furthermore, we measured the piezoelectric properties and found that there was a 1000-fold current increase under a strain of 1% with a fixed bias voltage of 10 mV. Based on the Schottky Barrier Diode model, we modified it with the effect of polarization charge, image charge and interface state to analyze the experiment results which reveals that the strong piezopolarization effect plays an important role in this phenomenon. Therefore, the GaN nanocolumns has a great prospect to be applied in high-efficiency nanogenerators and high-sensitivity nanosensors.
Reference Key
fu2019studynano Use this key to autocite in the manuscript while using SciMatic Manuscript Manager or Thesis Manager
Authors Fu, Jianbo;Zong, Hua;Hu, Xiaodong;Zhang, Haixia;
Journal nano convergence
Year 2019
DOI
10.1186/s40580-019-0203-4
URL
Keywords
sensitivity gan micro/nano columns piezoelectric effect self-organized catalytic-free growth young’s modulus

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