Low Impedance ALD HfO2 Partially-Filled-Gap Flexural and Bulk MEMS Resonators Piezoresistively Detected for Distributed Mass Sensing

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ID: 59120
2017
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Abstract
This paper reports the design and characterization of partially-filled-gap capacitive MEMS resonators for distributed mass sensing applications. By filling the gap with HfO2, the coupling coefficient between electrode-resonator increases by ×6.67 times and the motional resistance decreases by ×12 times in comparison with its counterpart in air. An improvement by a factor of ×5.6 in the Signal-To-Noise Ratio (SNR) for DC bias up to ×2.8 lower is accomplished by performing a piezoresistive detection instead of capacitive detection. Quality factor (Q) of 11,350 and motional resistances (Rm) of 926 Ω have been achieved for Parallel Beam Resonators (PBR) vibrating at 22.231 MHz. For the first time, ALD HfO2 partially-filled-gap MEMS resonators are proven to achieve inertial distributed mass sensitivities of the order of 4.28 kHz/pg for beam-type and 1.8k Hz/pg for disk resonators.
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lopez2017lowproceedings Use this key to autocite in the manuscript while using SciMatic Manuscript Manager or Thesis Manager
Authors Lopez, Mariazel Maqueda;Casu, Emanuele Andrea;Fernandez-Bolanos, Montserrat;Ionescu, Adrian Mihai;
Journal proceedings
Year 2017
DOI
DOI not found
URL
https://www.mdpi.com/2504-3900/1/4/391
Keywords
Education Science physics general works education (general)

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