Carrier-resolved photo-Hall effect.

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ID: 58777
2019
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Abstract
Majority and minority carrier properties such as type, density and mobility represent fundamental yet difficult to access parameters governing semiconductor device performance. Obtaining this information simultaneously under light illumination would unlock many critical parameters vital for optoelectronic devices and solar cells, but realizing this goal has remained elusive. Here we demonstrate a carrier-resolved photo-Hall technique that rests on a new equation relating hole-electron Hall mobility difference (Δμ), Hall coefficient (H) and conductivity (σ): Δμ = d(σH)/dσ. This discovery, together with advances in a.c.-field Hall measurement using a rotating parallel dipole line system, allows us to unlock a host of critical parameters for both majority and minority carriers such as recombination lifetime, diffusion length and recombination coefficient. We successfully apply this technique to a variety of solar absorbers, including high-performance lead-iodide-based perovskites. By mapping the Hall data against varying light intensities, unprecedented simultaneous access to these parameters is demonstrated. This information, buried in the photo-Hall measurement, has been elusive for 140 years since the original discovery of the Hall effect. Beyond historical significance, the applications of simultaneous majority/minority carrier measurement are broad, including photovoltaics and other optoelectronic devices.
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gunawan2019carrierresolvednature Use this key to autocite in the manuscript while using SciMatic Manuscript Manager or Thesis Manager
Authors Gunawan, Oki;Pae, Seong Ryul;Bishop, Douglas M;Virgus, Yudistira;Noh, Jun Hong;Jeon, Nam Joong;Lee, Yun Seog;Shao, Xiaoyan;Todorov, Teodor;Mitzi, David B;Shin, Byungha;
Journal Nature
Year 2019
DOI
10.1038/s41586-019-1632-2
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