Investigation on Thermally Induced Efficiency Roll-Off: Towards Efficient and Ultra-Bright Quantum-Dot Light-Emitting Diodes.

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ID: 51075
2019
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Abstract
Quantum-dot light-emitting diodes (QLEDs) with high brightness have potential application in lighting and display. The high brightness is realized at high current density (J). However, at high J, the efficiency drops significantly, thereby limiting the achievable brightness. This notorious phenomenon has been known as efficiency roll-off, which is likely caused by the Auger- and/or thermal-induced emission quenching. In this work, we show that the Joule heat generated during device operation significantly affects the roll-off characteristics of QLEDs. To realize ultra-bright and efficient QLEDs, the thermal stability of QDs is improved by replacing the conventional oleic acid ligands with 1-dodecanethiol. By further using a substrate with high thermal conductivity, the Joule heat generated at high J is effectively dissipated. Because of the effective thermal management, thermal-induced emission quenching is significantly suppressed, and consequently, the QLEDs exhibit a high external quantum efficiency (EQE) of 16.6%, which is virtually droop-free over a wide range of brightness (e.g., EQE=16.1% @ 105 cd/m2 and 140 mA/cm2). Moreover, due to the reduced efficiency roll-off and enhanced heat dissipation, the demonstrated QLEDs can be operated at a very high J up to 3885 mA/cm2, thus enabling the devices to exhibit a record-high brightness of 1.6×106 cd/m2 and a lumen density of 500 lm/cm2. Our work demonstrates the significance of thermal management for the development of droop-free and ultra-bright QLED devices for a wide variety of applications including lighting, transparent display, projection display, outdoor digital signage, phototherapy and etc.
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sun2019investigationacs Use this key to autocite in the manuscript while using SciMatic Manuscript Manager or Thesis Manager
Authors Sun, Yizhe;Su, Qiang;Zhang, Heng;Wang, Fei;Zhang, Shengdong;Chen, Shuming;
Journal acs nano
Year 2019
DOI
10.1021/acsnano.9b04879
URL
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