Effect of Edge Roughness on Static Characteristics of Graphene Nanoribbon Field Effect Transistor

Clicks: 344
ID: 44499
2016
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Abstract
In this paper, we present a physics-based analytical model of GNR FET, which allows for the evaluation of GNR FET performance including the effects of line-edge roughness as its practical specific non-ideality. The line-edge roughness is modeled in edge-enhanced band-to-band-tunneling and localization regimes, and then verified for various roughness amplitudes. Corresponding to these two regimes, the off-current is initially increased, then decreased; while, on the other hand, the on-current is continuously decreased by increasing the roughness amplitude.
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banadaki2016effectelectronics Use this key to autocite in the manuscript while using SciMatic Manuscript Manager or Thesis Manager
Authors Banadaki, Yaser M.;Srivastava, Ashok;
Journal Electronics
Year 2016
DOI
DOI not found
URL
http://www.mdpi.com/2079-9292/5/1/11
Keywords
electronics

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