Explicit Model of Channel Charge, Backscattering, and Mobility for Graphene FET in Quasi-Ballistic Regime

Clicks: 193
ID: 44486
2018
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upadhyay2018explicitieee Use this key to autocite in the manuscript while using SciMatic Manuscript Manager or Thesis Manager
Authors Upadhyay, A.
Journal ieee transactions on electron devices
Year 2018
DOI
10.1109/TED.2018.2877631
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