Ultrahigh Gauge Factor in Graphene/MoS Heterojunction Field Effect Transistor with Variable Schottky Barrier.

Clicks: 380
ID: 44463
2019
Article Quality & Performance Metrics
Overall Quality
Not rated
Combines reader engagement with the AI quality analysis. This article has not been analysed, so there is no overall score — reader engagement is measured and shown alongside.
AI Quality Assessment
Not analyzed
Readership in this journal
Steady

Ranked #17 of 150 articles by views in acs nano

Most read Least read

Bar heights use a square-root scale. Only the 120 most-read articles are drawn; the journal has 150 in total.

Mint this article as an NFT
Not yet minted

Create a permanent, verifiable on-chain record of this article on the Scimatic Network. The NFT is held in your Journament account, and you can withdraw it to your own wallet at any time.

5 SUSD one-off · no wallet required
Sign in to mint
Abstract
Piezoelectricity of transition metal dichalcogenides (TMDs) under mechanical strain has been theoretically and experimentally studied. Powerful strain sensors using Schottky barrier variation in TMD/metal junctions as a result of the strain-induced lattice distortion and associated ion-charge polarization were demonstrated. However, the nearly fixed work function of metal electrodes limits the variation range of a Schottky barrier. We demonstrate a highly sensitive strain sensor using a variable Schottky barrier in a MoS/graphene heterostructure field effect transistor (FET). The low density of states near the Dirac point in graphene allows large modulation of the graphene Fermi level and corresponding Schottky barrier in a MoS/graphene junction by strain-induced polarized charges of MoS. Our theoretical simulations and temperature-dependent electrical measurements show that the Schottky barrier change is maximized by placing the Fermi level of the graphene at the charge neutral (Dirac) point by applying gate voltage. As a result, the maximum Schottky barrier change (ΔΦ) and corresponding current change ratio under 0.17% strain reach 118 meV and 978, respectively, resulting in an ultrahigh gauge factor of 575 294, which is approximately 500 times higher than that of metal/TMD junction strain sensors (1160) and 140 times higher than the conventional strain sensors (4036). The ultrahigh sensitivity of graphene/MoS heterostructure FETs can be developed for next-generation electronic and mechanical-electronic devices.
Reference Key
lee2019ultrahighacs Use this key to autocite in the manuscript while using SciMatic Manuscript Manager or Thesis Manager
Authors Lee, Ilmin;Kang, Won Tae;Shin, Yong Seon;Kim, Young Rae;Won, Ui Yeon;Kim, Kunnyun;Duong, Dinh Loc;Lee, Kiyoung;Heo, Jinseong;Lee, Young Hee;Yu, Woo Jong;
Journal acs nano
Year 2019
DOI
10.1021/acsnano.9b03993
URL
Keywords
schottky barrier height graphene strain molybdenum disulfide van der waals heterostructure

Citations

No citations found. To add a citation, contact the admin at info@scimatic.org

Comments

No comments yet. Be the first to comment on this article.