Electric double layer gating of two-dimensional field-effect transistors using a single-ion conductor.

Clicks: 241
ID: 44456
2019
Article Quality & Performance Metrics
Overall Quality
Not rated
Combines reader engagement with the AI quality analysis. This article has not been analysed, so there is no overall score — reader engagement is measured and shown alongside.
AI Quality Assessment
Not analyzed
Readership in this journal
Emerging

Ranked #288 of 899 articles by views in ACS applied materials & interfaces

Most read Least read

Bar heights use a square-root scale. Only the 120 most-read articles are drawn; the journal has 899 in total.

Mint this article as an NFT
Not yet minted

Create a permanent, verifiable on-chain record of this article on the Scimatic Network. The NFT is held in your Journament account, and you can withdraw it to your own wallet at any time.

5 SUSD one-off · no wallet required
Sign in to mint
Abstract
Electric double layer (EDL) gating using a custom-synthesized polyester single-ion conductor (PE400-Li) is demonstrated on two-dimensional (2D) crystals for the first time. The electronic properties of graphene and MoTe field-effect transistors (FETs) gated with the single-ion conductor are directly compared to a polyethylene oxide dual-ion conductor (PEO:CsClO). The anions in the single-ion conductor are covalently bound to the backbone of the polymer, leaving only the cations free to form an EDL at the negative electrode and a corresponding cationic depletion layer at the positive electrode. Because the cations are mobile in both the single- and dual-ion conductors, a similar enhancement of the -branch is observed in both graphene and MoTe. Specifically, the single-ion conductor decreases the subthreshold swing in the -branch of the bare MoTe FET from 5000 to 250 mV/dec and increases the current density and on/off ratio by two orders of magnitude. However, the single-ion conductor suppressed the -branch in both the graphene and the MoTe FETs, and finite-element modeling of ion transport shows that this result is unique to single-ion conductor gating in combination with an asymmetric gate/channel geometry. Both the experiments and modeling suggest that single-ion conductor-gated FETs can achieve sheet densities up to 10 cm, which corresponds to a charge density that would theoretically be sufficient to induce several percent strain in monolayer 2D crystals and potentially induce a semiconductor-to-metal phase transition in MoTe.
Reference Key
xu2019electricacs Use this key to autocite in the manuscript while using SciMatic Manuscript Manager or Thesis Manager
Authors Xu, Ke;Liang, Jierui;Woeppel, Aaron;Bostian, Micah Eli;Ding, Hangjun;Chao, Zhongmou;McKone, James R;Beckman, Eric J;Fullerton-Shirey, Susan K;
Journal ACS applied materials & interfaces
Year 2019
DOI
10.1021/acsami.9b11526
URL
Keywords Keywords not found

Citations

No citations found. To add a citation, contact the admin at info@scimatic.org

Comments

No comments yet. Be the first to comment on this article.