Engineering electron-phonon coupling of quantum defects to a semi-confocal acoustic resonator.

Clicks: 215
ID: 42377
2019
Article Quality & Performance Metrics
Overall Quality
Not rated
Combines reader engagement with the AI quality analysis. This article has not been analysed, so there is no overall score — reader engagement is measured and shown alongside.
AI Quality Assessment
Not analyzed
Readership in this journal
Emerging

Ranked #51 of 275 articles by views in Nano letters

Most read Least read

Bar heights use a square-root scale. Only the 120 most-read articles are drawn; the journal has 275 in total.

Mint this article as an NFT
Not yet minted

Create a permanent, verifiable on-chain record of this article on the Scimatic Network. The NFT is held in your Journament account, and you can withdraw it to your own wallet at any time.

5 SUSD one-off · no wallet required
Abstract
Diamond-based microelectromechanical systems (MEMS) enable direct coupling between the quantum states of nitrogen-vacancy (NV) centers and the phonon modes of a mechanical resonator. One example, diamond high-overtone bulk acoustic resonators (HBARs), feature an integrated piezoelectric transducer and support high-quality factor resonance modes into the GHz frequency range. The acoustic modes allow mechanical manipulation of deeply embedded NV centers with long spin and orbital coherence times. Unfortunately, the spin-phonon coupling rate is limited by the large resonator size, >100 μm, and thus strongly-coupled NV electron-phonon interactions remain out of reach in current diamond BAR devices. Here, we report the design and fabrication of a semi-confocal HBAR (SCHBAR) device on diamond (silicon carbide) with f·Q>10 (10). The semi-confocal geometry confines the phonon mode laterally below 10 μm. This drastic reduction in modal volume enhances defect center coupling to a mechanical mode by 1000 times compared to prior HBAR devices. For the native NV centers inside the diamond device, we demonstrate mechanically driven spin transitions and show a high strain-driving efficiency with a Rabi frequency of (2π)2.19(14) MHz/V, which is comparable to a typical microwave antenna at the same microwave power, making SCHBAR a power-efficient device useful for fast spin control, dressed state coherence protection and quantum circuit integration.
Reference Key
chen2019engineeringnano Use this key to autocite in the manuscript while using SciMatic Manuscript Manager or Thesis Manager
Authors Chen, Huiyao;Opondo, Noah;Jiang, Boyang;MacQuarrie, Evan R;Daveau, Raphaël S;Bhave, Sunil A;Fuchs, Gregory D;
Journal Nano letters
Year 2019
DOI
10.1021/acs.nanolett.9b02430
URL
Keywords Keywords not found

Citations

No citations found. To add a citation, contact the admin at info@scimatic.org

No comments yet. Be the first to comment on this article.