Spin-Orbit Interaction and Magnetoresistance in the Two Dimensional Random System
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ID: 290285
1980
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Abstract
Effect of the spin-orbit interaction is studied for the random potential scattering in two dimensions by the renormalization group method. It is shown that the localization behaviors are classified in the three different types depending on the symmetry. The recent observation of the negative magnetoresistance of MOSFET is discussed.
| Reference Key |
openalex_W2132352444
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|---|---|
| Authors | S. Hikami, A. I. Larkin, Yasutaka Nagaoka |
| Journal | progress of theoretical physics |
| Year | 1980 |
| DOI |
10.1143/ptp.63.707
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| URL | |
| Keywords | Keywords not found |
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