Praseodymium-Doped GeInSbSe Films Based on Argon Plasma Cosputtering for Infrared-Luminescent Integrated Photonic Circuits.

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ID: 278808
2024
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Abstract
In this paper, we report on the infrared luminescence of amorphous praseodymium-doped GeInSbSe waveguides, which can be used as infrared sources in photonic integrated circuits on silicon substrates. Amorphous chalcogenide thin films were deposited by radiofrequency magnetron cosputtering using an argon plasma whose deposition parameters were optimized for chalcogenide materials. The micropatterning as ridge waveguides of the chalcogenide cosputtered films was performed using photolithography and plasma-coupled reactive ion etching techniques. The influence of the rare earth concentration within those thin films on their optical properties and rare earth spectroscopic properties was investigated. Using an excitation wavelength of 1.55 μm, the mid-infrared luminescence of Pr ions from 2.5 to 5.5 μm was clearly demonstrated for studied chalcogenide materials. A wide range of waveguide widths and doping ratios were tested, assessing the ability of the cosputtering technique to preserve the luminescence properties of the rare earth ions initially observed in the bulk glass through the thin-film deposition and patterning process.
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starecki2024praseodymiumdopedacs Use this key to autocite in the manuscript while using SciMatic Manuscript Manager or Thesis Manager
Authors Starecki, Florent;Baillieul, Marion;Ghanawi, Taghrid;Hammouti, Abdelali;Lemaitre, Jonathan;Gutwirth, Jan;Benardais, Albane;Slang, Stanislav;Charrier, Joël;Bodiou, Loïc;Nemec, Petr;Nazabal, Virginie;
Journal ACS applied materials & interfaces
Year 2024
DOI
10.1021/acsami.3c14602
URL
Keywords
luminescence infrared rare earth amorphous chalcogenides waveguides

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