Direct visualization and 3D reconstruction of conductive filaments in aSiO material-based memristive device.

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ID: 278806
2024
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Ranked #152 of 184 articles by views in Physical chemistry chemical physics : PCCP

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Abstract
Observation of conductive filaments has greatly aided the development of theoretical models of memristive devices. In this work, we visualized and reconstructed the conductive filaments in a Cu/Cu-doped SiO/W device employing a focused ion beam (FIB) as a milling technique. The SEM images taken from the device after 150 DC sweep cycles showed that Joule heat played a vital role in determining the morphology of a conductive filament, where the vaporization of the conductive filament resulted in the creation of defects, including particles, voids, and cavities. The competition between the formation and vaporization of conductive filaments generally induces a remarkable current fluctuation. Since Cu-doped SiO was utilized as the electrolyte, the vapors exfoliated adjacent single layers. FIB milling proceeded in top-down and front-back modes; thus, a 3D model of conductive filaments and defects was constructed according to a series of FIB-SEM images. This methodology is promising for a future failure analysis of memristive devices.
Reference Key
slang2024directphysical Use this key to autocite in the manuscript while using SciMatic Manuscript Manager or Thesis Manager
Authors Slang, Stanislav;Gu, Bin;Zhang, Bo;Janicek, Petr;Rodriguez-Pereira, Jhonatan;Wagner, Tomas;
Journal Physical chemistry chemical physics : PCCP
Year 2024
DOI
10.1039/d4cp00274a
URL
Keywords Keywords not found

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