Tin Compensation for the SnS Based Optoelectronic Devices - Scientific Reports

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ID: 274161
2017
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Abstract
In this paper we report the growth of high quality SnS thin films with good crystallinity deposited on two-dimensional (2D) mica substrates. It is believed that the 2D nature of SnS, with strong intra-layer covalent bonds and weak inter-layer van der Waals interactions, is responsible for its relative insensitivity to lattice mismatch. We also investigated the reduction of Sn vacancies in the material using Sn-compensation technique during the material growth process. The experimental results clearly demonstrated substantial enhancements in the electrical and structural properties for films deposited using Sn-compensation technique. A mobility of 51 cm2 V−1 s−1 and an XRD rocking curve full width at half maximum of 0.07° were obtained. Sn-compensated SnS/GaN:Si heterojunctions were fabricated and significant improvement in both the I-V characteristics and the spectral responsivities of the devices were characterized.
Reference Key
f.2017scientifictin Use this key to autocite in the manuscript while using SciMatic Manuscript Manager or Thesis Manager
Authors Wang, S. F.;Wang, W.;Fong, W. K.;Yu, Y.;Surya, C.;Wang, S. F.;Wang, W.;Fong, W. K.;Yu, Y.;Surya, C.;
Journal Scientific reports
Year 2017
DOI
doi:10.1038/srep39704
URL
https://dx.doi.org/10.1038/srep39704
Keywords
electrical and electronic engineering materials for devices

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