High-speed, high-reliability GaN power device with integrated gate driver

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ID: 273740
2018
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Abstract
An enhancement-mode GaN power switch with monolithically integrated gate driver is demonstrated on a 650-V GaN-on-Si power device platform. The integrated GaN-based gate driver features advanced designs such as bootstrapped gate-charging current source that enables high current driving capability during the entire turn-on process and rail-to-rail output. The GaN power transistor with integrated gate driver was characterized up to 300 V/15 A switching operations using a double pulse tester, and exhibits suppressed gate ringing and fast switching speed. The peak drain voltage slew rate d V/dt is above 125 V/ns during turn-on, and 336 V/ns during turn-off.
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Authors Gaofei Tang,M.-H. Kwan,Zhaofu Zhang,Jiabei He,Jiacheng Lei,R.-Y. Su,F.-W. Yao,Y.-M. Lin,J.-L. Yu,Thomas Yang,Chan-Hong Chern,Tom Tsai,H. C. Tuan,Alexander Kalnitsky,Kevin J. Chen;Gaofei Tang;M.-H. Kwan;Zhaofu Zhang;Jiabei He;Jiacheng Lei;R.-Y. Su;F.-W. Yao;Y.-M. Lin;J.-L. Yu;Thomas Yang;Chan-Hong Chern;Tom Tsai;H. C. Tuan;Alexander Kalnitsky;Kevin J. Chen;
Journal 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
Year 2018
DOI
10.1109/ispsd.2018.8393606
URL
https://sciprofiles.com/publication/view/f4a59bff9b8662da8f91c6e997f17b9c
Keywords
logic gates switches gallium nitride power transistors gate drivers switching circuits threshold voltage

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