Synergistic effect of band convergence and carrier transport on enhancing the thermoelectric performance of Ga doped CuTe at medium temperatures.

Clicks: 357
ID: 2737
2019
Article Quality & Performance Metrics
Overall Quality
Not rated
Combines reader engagement with the AI quality analysis. This article has not been analysed, so there is no overall score — reader engagement is measured and shown alongside.
AI Quality Assessment
Not analyzed
Readership in this journal
Popular

Ranked #202 of 1,628 articles by views in Scientific reports

Most read Least read

Bar heights use a square-root scale. Only the 120 most-read articles are drawn; the journal has 1,628 in total.

Mint this article as an NFT
Not yet minted

Create a permanent, verifiable on-chain record of this article on the Scimatic Network. The NFT is held in your Journament account, and you can withdraw it to your own wallet at any time.

5 SUSD one-off · no wallet required
Sign in to mint
Abstract
Recent advances in high performance thermoelectric materials have garnered unprecedented attention owing to their capability of direct transformation of heat energy to useful electricity. Copper Telluride (CuTe), a member of the chalcogenide family has emerged as a state-of-the-art thermoelectric material with low thermal conductivity and high thermoelectric (TE) performance, however, this material exhibits exceptional transport properties only at very high temperatures. In this study, we have investigated the synergistic effects of Ga doping on the TE performance by first principles calculations along with experimental validations. The DFT (Density Functional Theory) calculations predicted that Ga doping, within considerable limits enhanced the electrical conductivity and Seebeck coefficients in CuTe. This proof of concept was validated by experimental synthesis of Ga doped CuTe by simple direct annealing for shorter durations of 48 hours at 1120 ºC  (~1/4) than in previous work and subsequent thermoelectric characterization. The enhanced electrical conductivity, thermopower, and moderate thermal conductivities led to the optimized TE performance in 3 atomic % Ga doping (CuGaTe), exhibiting a ZT value of 0.46 at 600 K, almost three times that of pristine CuTe in this temperature range. This comprehensive study provides the platform for developing new low-cost and energy efficient TE materials with enhanced ZT performance in medium temperature applications.
Reference Key
sarkar2019synergisticscientific Use this key to autocite in the manuscript while using SciMatic Manuscript Manager or Thesis Manager
Authors Sarkar, Sayan;Sarswat, Prashant K;Saini, Shrikant;Mele, Paolo;Free, Michael L;
Journal Scientific reports
Year 2019
DOI
10.1038/s41598-019-43911-2
URL
Keywords Keywords not found

Citations

No citations found. To add a citation, contact the admin at info@scimatic.org

Comments

No comments yet. Be the first to comment on this article.