Structure and process of infrared hot electron transistor arrays
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2012
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Abstract
An infrared hot-electron transistor (IHET) 5 × 8 array with a common base configuration that allows two-terminal readout integration was investigated and fabricated for the first time. The IHET structure provides a maximum factor of six in improvement in the photocurrent to dark current ratio compar …
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r2012sensorsstructure
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| Authors | Fu R;; |
| Journal | sensors |
| Year | 2012 |
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