100 W C-band single-chip GaN FET power amplifier

Clicks: 106
ID: 273522
2006
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Abstract
A single-chip GaN-FET amplifier exhibits record output powers of C-band solid-state amplifiers under continuous-wave (CW) and pulsed operation conditions. At 5.0 GHz, the developed GaN-FET amplifier with 24 mm gate periphery delivered a CW 100 W output power with 12.9 dB linear gain and 31% power-added efficiency and a pulsed 155 W output power with 13.0 dB linear gain.
Reference Key
miyamoto2006electronics100 Use this key to autocite in the manuscript while using SciMatic Manuscript Manager or Thesis Manager
Authors Y. Okamoto,A. Wakejima,Y. Ando,T. Nakayama,K. Matsunaga,H. Miyamoto;Y. Okamoto;A. Wakejima;Y. Ando;T. Nakayama;K. Matsunaga;H. Miyamoto;
Journal electronics letters
Year 2006
DOI
10.1049/el:20064067
URL
https://sciprofiles.com/publication/view/86cf69780435c77982e54250b3995455
Keywords
13 db solid-state amplifiers algan-gan pulsed output power 155 w linear gain 5 ghz fet power amplifier c-band power amplifier pulsed operation condition continuous-wave condition power-added efficiency heterojunction fet 100 w 12.9 db

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