Photoemission-Based Photovoltage Probe of Semiconductor Surface and Interface Electronic Structure
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ID: 272393
1986
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Abstract
A saturation surface photovoltage is found to occur during ultraviolet photoemission at low temperatures ($T\ensuremath{\sim}20$ K) on a variety of silicon (111) surfaces. Below \ensuremath{\sim} 50 K surface recombination becomes ineffective thereby allowing flat-band conditions to be achieved with mild uv irradiation. Temperature-dependent photoemission thereby provides a simple and direct method for determining band bending and barrier heights. Results for different silicon (111) surfaces and preparation conditions are discussed.
| Reference Key |
demuth1986physicalphotoemission-based
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|---|---|
| Authors | J. E. Demuth;W. J. Thompson;N. J. DiNardo;R. Imbihl; |
| Journal | physical review letters |
| Year | 1986 |
| DOI |
doi:10.1103/PhysRevLett.56.1408
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