Effect of the Schottky Barrier Height on the Detection of Midgap Levels in 4H-SiC by Deep Level Transient Spectroscopy

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ID: 271450
2008
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Abstract
The effect of the Schottky barrier height on the detection of the midgap defects EH6 and EH7 in 4H-SiC by deep level transient spectroscopy (DLTS) is systematically studied. The results show that the DLTS peak height - and as a consequence the observed defect concentration - increases with the increasing barrier height and saturates above 1.5 eV for EH6 and above 1.7 eV for EH7, while below 1.1 eV the DLTS peak height completely disappears. A model is applied, which determines the position of the quasi-Fermi level in the space charge region as a function of the barrier height and of the reverse bias applied and which explains the variation of the DLTS peak height.
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choyke2008materialseffect Use this key to autocite in the manuscript while using SciMatic Manuscript Manager or Thesis Manager
Authors Sergey A. Reshanov,Gerhard Pensl,Katsunori Danno,Tsunenobu Kimoto,Shigeomi Hishiki,Takeshi Ohshima,Fei Yan,Robert P. Devaty,Wolfgang J. Choyke;Sergey A. Reshanov;Gerhard Pensl;Katsunori Danno;Tsunenobu Kimoto;Shigeomi Hishiki;Takeshi Ohshima;Fei Yan;Robert P. Devaty;Wolfgang J. Choyke;
Journal materials science forum
Year 2008
DOI
10.4028/www.scientific.net/msf.600-603.417
URL
https://sciprofiles.com/publication/view/692778f2e3fe466ffc3feec7d962e144
Keywords
dlts midgap level schottky barrier

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