Effect of the Schottky Barrier Height on the Detection of Midgap Levels in 4H-SiC by Deep Level Transient Spectroscopy
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2008
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Abstract
The effect of the Schottky barrier height on the detection of the midgap defects EH6 and EH7 in 4H-SiC by deep level transient spectroscopy (DLTS) is systematically studied. The results show that the DLTS peak height - and as a consequence the observed defect concentration - increases with the increasing barrier height and saturates above 1.5 eV for EH6 and above 1.7 eV for EH7, while below 1.1 eV the DLTS peak height completely disappears. A model is applied, which determines the position of the quasi-Fermi level in the space charge region as a function of the barrier height and of the reverse bias applied and which explains the variation of the DLTS peak height.
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choyke2008materialseffect
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| Authors | Sergey A. Reshanov,Gerhard Pensl,Katsunori Danno,Tsunenobu Kimoto,Shigeomi Hishiki,Takeshi Ohshima,Fei Yan,Robert P. Devaty,Wolfgang J. Choyke;Sergey A. Reshanov;Gerhard Pensl;Katsunori Danno;Tsunenobu Kimoto;Shigeomi Hishiki;Takeshi Ohshima;Fei Yan;Robert P. Devaty;Wolfgang J. Choyke; |
| Journal | materials science forum |
| Year | 2008 |
| DOI |
10.4028/www.scientific.net/msf.600-603.417
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