VCZ growth of high quality InP single crystal part II

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ID: 270218
1990
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Abstract
Recently, active research for the improvement of MISFET, HEMT, HBT, RHET and OEICs has demanded development of a semi-insulating InP substrate on which these devices can be fabricated. In the concluding part of this article, we learn of the growth characteristics, such as purity and striation of the Sumitomo VCZ technique. The report then details results obtained from a comparison of VPE InP and InGaAs epilayers grown on VCZ and LEC wafers.
Reference Key
akai1990eurovcz Use this key to autocite in the manuscript while using SciMatic Manuscript Manager or Thesis Manager
Authors T. Kawase,T. Araki,Y. Miura,T. Iwasaki,N. Yamabayashi,M. Tatsumi,S. Murai,K. Tada,S. Akai;T. Kawase;T. Araki;Y. Miura;T. Iwasaki;N. Yamabayashi;M. Tatsumi;S. Murai;K. Tada;S. Akai;
Journal Euro III-Vs Review
Year 1990
DOI
10.1016/0959-3527(90)90182-s
URL
https://sciprofiles.com/publication/view/4ee0cbfafd0d3128cbe27d2fa0080beb
Keywords
single crystal

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