Simulation and Modeling of Novel Electronic Device Architectures with NESS (Nano-Electronic Simulation Software): A Modular Nano TCAD Simulation Framework

Clicks: 181
ID: 270002
2021
Free PDF
Article Quality & Performance Metrics
Overall Quality Improving Quality
0.0 /100
Combines engagement data with AI-assessed academic quality
AI Quality Assessment
Not analyzed
Abstract
The modeling of nano-electronic devices is a cost-effective approach for optimizing the semiconductor device performance and for guiding the fabrication technology. In this paper, we present the capabilities of the new flexible multi-scale nano TCAD simulation software called Nano-Electronic Simulation Software (NESS). NESS is designed to study the charge transport in contemporary and novel ultra-scaled semiconductor devices. In order to simulate the charge transport in such ultra-scaled devices with complex architectures and design, we have developed numerous simulation modules based on various simulation approaches. Currently, NESS contains a drift-diffusion, Kubo–Greenwood, and non-equilibrium Green’s function (NEGF) modules. All modules are numerical solvers which are implemented in the C++ programming language, and all of them are linked and solved self-consistently with the Poisson equation. Here, we have deployed some of those modules to showcase the capabilities of NESS to simulate advanced nano-scale semiconductor devices. The devices simulated in this paper are chosen to represent the current state-of-the-art and future technologies where quantum mechanical effects play an important role. Our examples include ultra-scaled nanowire transistors, tunnel transistors, resonant tunneling diodes, and negative capacitance transistors. Our results show that NESS is a robust, fast, and reliable simulation platform which can accurately predict and describe the underlying physics in novel ultra-scaled electronic devices.
Reference Key
medina-bailon2021micromachinessimulation Use this key to autocite in the manuscript while using SciMatic Manuscript Manager or Thesis Manager
Authors Cristina Medina-Bailon;Tapas Dutta;Ali Rezaei;Daniel Nagy;Fikru Adamu-Lema;Vihar P. Georgiev;Asen Asenov;Medina-Bailon, Cristina;Dutta, Tapas;Rezaei, Ali;Nagy, Daniel;Adamu-Lema, Fikru;Georgiev, Vihar P.;Asenov, Asen;
Journal micromachines
Year 2021
DOI
10.3390/mi12060680
URL
https://doi.org/10.3390/mi12060680
Keywords
integrated simulation environment drift-diffusion quantum correction kubo-greenwood non-equilibrium green’s function nanowire transistors (nwt) tunnel fets (tfet) negative capacitance fets (ncfet) resonant tunneling diodes (rtd)

Citations

No citations found. To add a citation, contact the admin at info@scimatic.org

Comments

No comments yet. Be the first to comment on this article.