First detection of gamma-ray peaks by an undoped InSb Schottky detector
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ID: 269989
2006
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Abstract
The compound semiconductor InSb, because of its very small band-gap energy, high density and high atomic number, is suitable for the substrate of X-ray detectors with high-energy resolution and high efficiency. An InSb Schottky detector is fabricated with an undoped InSb wafer and is used in the measurement of 133Ba gamma-rays. Here, the first observation of an escape peak of 81 keV gamma-rays emitted by 133Ba using an InSb detector is reported. The event ratios of the escape and 81 keV gamma-rays were estimated by a Monte Carlo simulation code as a function of depletion layer thickness and were compared with experimental result.
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katagiri2006nuclearfirst
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| Authors | Shigeomi Hishiki,Yoshitaka Kogetsu,Ikuo Kanno,Tatsuya Nakamura,Masaki Katagiri;Shigeomi Hishiki;Yoshitaka Kogetsu;Ikuo Kanno;Tatsuya Nakamura;Masaki Katagiri; |
| Journal | nuclear instruments and methods in physics research section a: accelerators, spectrometers, detectors and associated equipment |
| Year | 2006 |
| DOI |
10.1016/j.nima.2005.12.052
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