Impact of Lattice Defects on Device Performance of AlGaAs/GaAs p-HEMTs

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ID: 269526
2001
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Authors Kobayashi, K.;Ohyama, H.;Hakata, T.;Kudou, T.;Shigaki, K.;Takizawa, H.;Kohiki, S.;Uwatoko, Y.;
Journal solid state phenomena
Year 2001
DOI
DOI not found
URL
https://doi.org/10.4028/www.scientific.net/ssp.78-79.319
Keywords
algaas/gaas p-hemt induced electron capture levels non-ionizing energy loss number of knock-on atoms radiation damage

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