Quantum Spin Hall Insulator State in HgTe Quantum Wells

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ID: 269160
2007
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Abstract
Recent theory predicted that the quantum spin Hall effect, a fundamentally new quantum state of matter that exists at zero external magnetic field, may be realized in HgTe/(Hg,Cd)Te quantum wells. We fabricated such sample structures with low density and high mobility in which we could tune, through an external gate voltage, the carrier conduction from n-type to p-type, passing through an insulating regime. For thin quantum wells with well width d < 6.3 nanometers, the insulating regime showed the conventional behavior of vanishingly small conductance at low temperature. However, for thicker quantum wells ( d > 6.3 nanometers), the nominally insulating regime showed a plateau of residual conductance close to 2 e 2/ h , where e is the electron charge and h is Planck's constant. The residual conductance was independent of the sample width, indicating that it is caused by edge states. Furthermore, the residual conductance was destroyed by a small external magnetic field. The quantum phase transition at the critical thickness, d = 6.3 nanometers, was also independently determined from the magnetic field–induced insulator-to-metal transition. These observations provide experimental evidence of the quantum spin Hall effect.
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könig2007sciencequantum Use this key to autocite in the manuscript while using SciMatic Manuscript Manager or Thesis Manager
Authors Markus König;Steffen Wiedmann;Christoph Brüne;Andreas Roth;Hartmut Buhmann;Laurens W. Molenkamp;Xiao-Liang Qi;Shou-Cheng Zhang;Markus König;Steffen Wiedmann;Christoph Brüne;Andreas Roth;Hartmut Buhmann;Laurens W. Molenkamp;Xiao-Liang Qi;Shou-Cheng Zhang;
Journal Science
Year 2007
DOI
10.1126/science.1148047
URL
https://doi.org/10.1126%2Fscience.1148047
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