Quantification of High Resolution Pulsed RF GDOES Depth Profiles for Mo/B4C/Si Nano-Multilayers
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ID: 267931
2021
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Abstract
Pulsed-radio frequency glow discharge optical emission spectrometry (Pulsed-RF-GDOES) has exhibited great potential for high resolution (HR) depth profiling. In this paper, the measured GDOES depth profile of 60 × Mo (3 nm)/B4C (0.3 nm)/Si (3.7 nm) was quantified by employing the newly extended Mixing-Roughness-Information depth (MRI) model. We evaluated the influences of the thickness and sputtering rate on the depth profile of very thin layers. We demonstrated that a method using the full width at half maximum (FWHM) value of the measured time-concentration profile for determining the sputtering rate and the corresponding thickness was not reliable if preferential sputtering took place upon depth profiling.
| Reference Key |
yang2021coatingsquantification
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| Authors | Hao Yang;Songyou Lian;Patrick Chapon;Yibing Song;Jiangyong Wang;Congkang Xu;Yang, Hao;Lian, Songyou;Chapon, Patrick;Song, Yibing;Wang, Jiangyong;Xu, Congkang; |
| Journal | coatings |
| Year | 2021 |
| DOI |
10.3390/coatings11060612
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