Radiation source dependence of device performance degradation for 4H-SiC MESFETs

Clicks: 217
ID: 267530
2006
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Abstract
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Reference Key
claeys2006superlatticesradiation Use this key to autocite in the manuscript while using SciMatic Manuscript Manager or Thesis Manager
Authors H. Ohyama,K. Takakura,K. Uemura,K. Shigaki,T. Kudou,T. Matsumoto,M. Arai,S. Kuboyama,C. Kamezawa,E. Simoen,C. Claeys;H. Ohyama;K. Takakura;K. Uemura;K. Shigaki;T. Kudou;T. Matsumoto;M. Arai;S. Kuboyama;C. Kamezawa;E. Simoen;C. Claeys;
Journal superlattices and microstructures
Year 2006
DOI
10.1016/j.spmi.2006.09.009
URL
https://sciprofiles.com/publication/view/0c2cd94773f382169995f1ef7e712476
Keywords
thermal annealing radiation damage sic-mesfet induced deep levels

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