Radiation source dependence of device performance degradation for 4H-SiC MESFETs

Clicks: 149
ID: 267530
2006
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Authors H. Ohyama,K. Takakura,K. Uemura,K. Shigaki,T. Kudou,T. Matsumoto,M. Arai,S. Kuboyama,C. Kamezawa,E. Simoen,C. Claeys;H. Ohyama;K. Takakura;K. Uemura;K. Shigaki;T. Kudou;T. Matsumoto;M. Arai;S. Kuboyama;C. Kamezawa;E. Simoen;C. Claeys;
Journal superlattices and microstructures
Year 2006
DOI
10.1016/j.spmi.2006.09.009
URL
https://sciprofiles.com/publication/view/0c2cd94773f382169995f1ef7e712476
Keywords
thermal annealing radiation damage sic-mesfet induced deep levels

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