High–temperature droplet epitaxy of symmetric GaAs/AlGaAs quantum dots

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ID: 267109
2020
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Abstract
We introduce a high–temperature droplet epitaxy procedure, based on the control of the arsenization dynamics of nanoscale droplets of liquid Ga on GaAs(111)A surfaces. The use of high temperatures for the self-assembly of droplet epitaxy quantum dots solves major issues related to material defects, introduced during the droplet epitaxy fabrication process, which limited its use for single and entangled photon sources for quantum photonics applications. We identify the region in the parameter space which allows quantum dots to self–assemble with the desired emission wavelength and highly symmetric shape while maintaining a high optical quality. The role of the growth parameters during the droplet arsenization is discussed and modeled.
Reference Key
bietti2020scientifichigh–temperature Use this key to autocite in the manuscript while using SciMatic Manuscript Manager or Thesis Manager
Authors Sergio Bietti;Francesco Basso Basset;Artur Tuktamyshev;Emiliano Bonera;Alexey Fedorov;Stefano Sanguinetti;Sergio Bietti;Francesco Basso Basset;Artur Tuktamyshev;Emiliano Bonera;Alexey Fedorov;Stefano Sanguinetti;
Journal Scientific reports
Year 2020
DOI
doi:10.1038/s41598-020-62248-9
URL
https://dx.doi.org/10.1038/s41598-020-62248-9
Keywords
quantum dots semiconductors single photons and quantum effects

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