Digital Integrated Circuits on an E-Mode GaN Power HEMT Platform

Clicks: 179
ID: 266965
2017
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Authors Gaofei Tang,Alex M. H. Kwan,Roy K. Y. Wong,Jiacheng Lei,R. Y. Su,F. W. Yao,Y. M. Lin,J. L. Yu,Tom Tsai,H. C. Tuan,Alexander Kalnitsky,Kevin J. Chen;Gaofei Tang;Alex M. H. Kwan;Roy K. Y. Wong;Jiacheng Lei;R. Y. Su;F. W. Yao;Y. M. Lin;J. L. Yu;Tom Tsai;H. C. Tuan;Alexander Kalnitsky;Kevin J. Chen;
Journal ieee electron device letters
Year 2017
DOI
10.1109/led.2017.2725908
URL
https://sciprofiles.com/publication/view/681f6b8c37fb9cdf4fe5ef3553ce57ff
Keywords
logic gates integrated circuits hemts gallium nitride inverters propagation delay ring oscillators

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