Contactless Measurements of Carrier Concentrations in InGaAs Layers for Utilizing in InP-Based Quantum Cascade Lasers by Employing Optical Spectroscopy
Clicks: 191
ID: 266895
2020
Article Quality & Performance Metrics
Overall Quality
Not rated
Combines reader engagement with the AI quality analysis. This
article has not been analysed, so there is no overall score —
reader engagement is measured and shown alongside.
Reader Engagement
Emerging Content
30.0
/100
191 views
14 readers
AI Quality Assessment
Not analyzed
Readership in this journal
EmergingRanked #601 of 812 articles by views in Materials (Basel, Switzerland)
Most read
Least read
Bar heights use a square-root scale. Only the 120 most-read articles are drawn; the journal has 812 in total.
Mint this article as an NFT
Not yet mintedCreate a permanent, verifiable on-chain record of this article on the Scimatic Network. The NFT is held in your Journament account, and you can withdraw it to your own wallet at any time.
5
SUSD
one-off · no wallet required
Abstract
The precise determination of carrier concentration in doped semiconductor materials and nanostructures is of high importance. Many parameters of an operational device are dependent on the proper carrier concentration or its distribution in both the active area as well as in the passive parts as the …
Abstract Quality Issue:
This abstract appears to be incomplete or contains metadata (46 words).
Try re-searching for a better abstract.
| Reference Key |
m2020materialscontactless
Use this key to autocite in the manuscript while using
SciMatic Manuscript Manager or Thesis Manager
|
|---|---|
| Authors | Kurka M;Rygała M;Sęk G;Gutowski P;Pierściński K;Motyka M;; |
| Journal | Materials (Basel, Switzerland) |
| Year | 2020 |
| DOI |
DOI not found
|
| URL | |
| Keywords |
Citations
No citations found. To add a citation, contact the admin at info@scimatic.org
Comments
No comments yet. Be the first to comment on this article.