Spiral growth without dislocations: molecular beam epitaxy of the topological insulator Bi2Se3 on epitaxial graphene/SiC(0001)
Clicks: 215
ID: 266619
2012
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Abstract
We report a new mechanism that does not require the formation of interfacial dislocations to mediate spiral growth during molecular beam epitaxy of Bi2Se3. Based on in situ scanning tunneling microscopy observations, we find that Bi2Se3 growth on epitaxial graphene/SiC(0001) initiates with two-dimen …
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| Reference Key |
y2012physicalspiral
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|---|---|
| Authors | Liu Y;Weinert M;Li L;; |
| Journal | physical review letters |
| Year | 2012 |
| DOI |
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