Surface state transport and ambipolar electric field effect in Bi₂Se₃ nanodevices
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ID: 265600
2010
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Abstract
Electronic transport experiments involving the topologically protected states found at the surface of Bi2Se3 and other topological insulators require fine control over carrier density, which is challenging with existing bulk-doped material. Here we report on electronic transport measurements on thin …
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| Reference Key |
h2010nanosurface
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|---|---|
| Authors | Steinberg H;Gardner DR;Lee YS;Jarillo-Herrero P;; |
| Journal | Nano letters |
| Year | 2010 |
| DOI |
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