Indium oxide and indium-tin-oxide channel ferroelectric gate thin film transistors with yttrium doped hafnium-zirconium dioxide gate insulator prepared by chemical solution process

Clicks: 180
ID: 264623
2021
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mohit2021indiumjapanese Use this key to autocite in the manuscript while using SciMatic Manuscript Manager or Thesis Manager
Authors Mohit,
Journal japanese journal of applied physics
Year 2021
DOI
10.35848/1347-4065/abd6da
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