Modification of Back Contact in CuZnSnS Solar Cell by Inserting Al-Doped ZnO Intermediate Layer.

Clicks: 315
ID: 263618
2020
Article Quality & Performance Metrics
Overall Quality
Not rated
Combines reader engagement with the AI quality analysis. This article has not been analysed, so there is no overall score — reader engagement is measured and shown alongside.
AI Quality Assessment
Not analyzed
Readership in this journal
Emerging

Ranked #133 of 899 articles by views in ACS applied materials & interfaces

Most read Least read

Bar heights use a square-root scale. Only the 120 most-read articles are drawn; the journal has 899 in total.

Mint this article as an NFT
Not yet minted

Create a permanent, verifiable on-chain record of this article on the Scimatic Network. The NFT is held in your Journament account, and you can withdraw it to your own wallet at any time.

5 SUSD one-off · no wallet required
Sign in to mint
Abstract
The optimization of back contact interface is crucial to improve the performance of CuZnSnS (CZTS) thin film solar cells. In this paper, we first employ Al-doped ZnO (AZO) as the intermediate layer into the Mo/CZTS interface to improve the quality of back contact region. This AZO intermediate layer, obtained from the sputtering method prior to the CZTS precursor deposition, initially blocks the direct contact of CZTS with the Mo layer and thus indeed suppresses the decomposition reaction between Mo and CZTS. Consequently, the generation of voids at the back contact region is obviously avoided. Besides, the AZO intermediate layer can inhibit the reaction between sulfur (S) and Mo during sulfurization process, and thus significantly reduce the thickness of MoS. Meanwhile, the AZO intermediate layer with suitable thickness does not affect the crystal quality of CZTS absorber layer. Moreover, the effects of different thicknesses of predeposited AZO on the film morphology, composition, and corresponding device performance were systematically studied. After optimizing the thickness of the AZO layer, the efficiency of the resultant device has increased from 7.1% to 8.4% (the active area efficiency is 9.2%).
Reference Key
lu2020modificationacs Use this key to autocite in the manuscript while using SciMatic Manuscript Manager or Thesis Manager
Authors Lu, Xiaoshuang;Xu, Bin;Qin, Xiatong;Chen, Ye;Yang, Pingxiong;Chu, Junhao;Sun, Lin;
Journal ACS applied materials & interfaces
Year 2020
DOI
10.1021/acsami.0c18799
URL
Keywords
Azo CZTS solar cells back contact magnetron sputtering

Citations

No citations found. To add a citation, contact the admin at info@scimatic.org

Comments

No comments yet. Be the first to comment on this article.