variation of redistribution of an infused dopant in a multilayer structure with variation of pressure of vapor of the dopant

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ID: 250689
2016
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Abstract
It has recently been shown, that doping of multilayer structures by diffusion or ion implantation and optimization of annealing of dopant and/or radiation defects gives us possibility to increase sharpness of p-n-junctions (single p-n-junctions and p-n-junctions within transistors) and to increase homogeneity of dopant distribution in doped area. In this paper we analyzed influence of pressure of vapor of infusing dopant during doping of multilayer structure on values of optimal parameters of technological process. We also consider an analytical approach to model technological process. In this paper we also consider an analytical approach to model redistribution of dopant.
Kürzlich wurde gezeigt, dass die Dotierung von Mehrschichtstrukturen durch Diffusion oder Ionenimplantation sowie die Optimierung der Ausheilung von Dotierstoffen und/oder Strahlungsdefekten die Möglichkeit bietet, die Schärfe von p-n-Übergängen (einzelne p-n-Übergänge sowie p-n-Übergänge innerhalb von Transistoren) zu erhöhen und die Homogenität der Dotierstoffverteilung im dotierten Bereich zu steigern. In dieser Arbeit untersuchten wir den Einfluss des Dampfdrucks des eindiffundierenden Dotierstoffs während der Dotierung der Mehrschichtstruktur auf die Werte der optimalen Parameter des technologischen Prozesses. Wir betrachten zudem einen analytischen Ansatz zur Modellierung des technologischen Prozesses. In dieser Arbeit betrachten wir außerdem einen analytischen Ansatz zur Modellierung der Umverteilung des Dotierstoffs.
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pankratov2016internationalvariation Use this key to autocite in the manuscript while using SciMatic Manuscript Manager or Thesis Manager
Authors E Pankratov, E Bulaeva
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Journal contrast media & molecular imaging
Year 2016
DOI
10.1260/1750-9548.8.4.411
URL
http://journal.multiphysics.org/index.php/IJM/article/view/271
Keywords
physics

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