bias polarity-sensitive electrical failure characteristics of znse nanowire in metal–semiconductor–metal nanostructure

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ID: 249185
2014
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Abstract
The effect of bias polarity on the electrical breakdown behavior of the single ZnSe nanowire (NW) in the metal–semiconductor–metal (M–S–M) nanostructure under high current density and high bias conditions has been studied in the present paper. The experimental results show that the failure of the ZnSe NW in M–S–M nanostructure was sensitive to bias polarity since the NW commonly collapsed at the negatively biased Au metal electrode due to high Joule heat produced in NW at the reversely biased Schottky barrier. Thus, the electrical breakdown behavior of the ZnSe NW was highly dominated by the cathode-controlled mode due to the high resistance of the depletion region of ZnSe NW at the reversely biased Schottky contact.
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tan2014progressbias Use this key to autocite in the manuscript while using SciMatic Manuscript Manager or Thesis Manager
Authors ;Yu Tan;Yanguo Wang
Journal acta paediatrica scandinavica
Year 2014
DOI
10.1016/j.pnsc.2014.03.011
URL
http://www.sciencedirect.com/science/article/pii/S1002007114000343
Keywords
semiconductor nanowire mechanics of materials in situ temmaterials of engineering and construction

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