circuit design with adjustable threshold using the independently controlled double gate feature of the vertical slit field effect transistor (vesfet)

Clicks: 123
ID: 243948
2010
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Ranked #28 of 52 articles by views in neuropsychiatrie : klinik, diagnostik, therapie und rehabilitation : organ der gesellschaft osterreichischer nervenarzte und psychiater

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Abstract
The recently introduced Vertical Slit Field Effect Transistor allows for adjusting its threshold voltage through independent controllable gates. This feature can be applied to a broad range of circuits. In this paper two examples are presented. First, a ring oscillator with a wide frequency tuning range and second, a Schmitt trigger with a controllable hysteresis.
Reference Key
weis2010advancescircuit Use this key to autocite in the manuscript while using SciMatic Manuscript Manager or Thesis Manager
Authors ;M. Weis;D. Schmitt-Landsiedel
Journal neuropsychiatrie : klinik, diagnostik, therapie und rehabilitation : organ der gesellschaft osterreichischer nervenarzte und psychiater
Year 2010
DOI
10.5194/ars-8-275-2010
URL
http://www.adv-radio-sci.net/8/275/2010/ars-8-275-2010.pdf
Keywords
engineering (general) civil engineering (general)

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