c-v calculations in cds/cdte thin films solar cells with a cdsxte1-x interlayer
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ID: 241279
2013
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Abstract
In CdS/CdTe solar cells, chemical interdiffusion at the interface gives rise to the formation of an interlayer of the ternary compound CdSxCdTe1-x. In this work, we evaluate the effects of this interlayer in CdS/CdTe photovoltaic cells in order to improve theoretical results describing experimental C-V (capacitance versus voltage) characteristics. We extended our previous theoretical methodology developed on the basis of three cardinal equations (Castillo-Alvarado et al., 2010). The present results provide a better fit to experimental data obtained from CdS/CdTe solar cells grown in our laboratory by the chemical bath deposition (for CdS film) and the close-spaced vapor transport (for CdTe film) techniques.
| Reference Key |
gonzalez-cisneros2013internationalc-v
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|---|---|
| Authors | ;A. Gonzalez-Cisneros;F. L. Castillo-Alvarado;J. Ortiz-Lopez;G. Contreras-Puente |
| Journal | construction and building materials |
| Year | 2013 |
| DOI |
10.1155/2013/513217
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| URL | |
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