shift in room-temperature photoluminescence of low-fluence si+-implanted sio2 films subjected to rapid thermal annealing

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ID: 241015
2008
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Abstract
We experimentally demonstrate the effect of the rapid thermal annealing (RTA) in nitrogen flow on photoluminescence (PL) of SiO2 films implanted by different doses of Si+ ions. Room-temperature PL from 400-nm-thick SiO2 films implanted to a dose of 3×1016 cm−2 shifted from 2.1 to 1.7 eV upon increasing RTA temperature (950–1150 °C) and duration (5–20 s). The reported approach of implanting silicon into SiO2 films followed by RTA may be effective for tuning Si-based photonic devices.
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Authors Ming-Yue Fu, Jen-Hwan Tsai, Cheng-Fu Yang and Chih-Hsiung Liao
Journal ieee control systems letters
Year 2008
DOI
DOI not found
URL
http://www.iop.org/EJ/abstract/1468-6996/9/4/045001
Keywords
photoluminescence mechanics of materialsbiotechnology

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